An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Xie, Gang; Zhang, Bo; Xu, Edward; Hashemi, Niloufar; Fu, Fred Y.; Ng, Wai Tung . (2012). An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage. Chinese Physics B, 21(8), 086105–. doi:10.1088/1674-1056/21/8/086105

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