P Meunier-Beillard; M Caymax; K Van Nieuwenhuysen; G Doumen; B Brijs; M Hopstaken; L Geenen; W Vandervorst. (2004). N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C. , 224(1-4), 31–35.
doi:10.1016/j.apsusc.2003.08.088
